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MMT10B230T3, MMT10B260T3, MMT10B310T3
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ m s, I SC = 1.0 A, Vdc = 1000 V)
MMT10B230T3, G
V (BO)
?
?
265
V
MMT10B260T3, G
MMT10B310T3, G
?
?
?
?
320
365
(+65 ° C)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
Breakover Voltage (Both polarities)
(f = 60 Hz, I SC = 1.0 A(rms), V OC = 1000 V(rms), MMT10B230T3, G
R I = 1.0 k W , t = 0.5 cycle) (Note 3) MMT10B260T3, G
MMT10B310T3, G
V (BO)
?
?
?
?
?
?
?
?
?
?
?
?
290
340
400
265
320
365
V
(+65 ° C)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
?
?
?
?
?
?
290
340
400
Breakover Voltage Temperature Coefficient
dV (BO) /dT J
?
0.08
?
%/ ° C
Breakdown Voltage (I (BR) = 1.0 mA) Both polarities
V (BR)
V
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
?
?
?
190
240
280
?
?
?
Off State Current (V D1 = 50 V) Both polarities
Off State Current (V D2 = V DM ) Both polarities
On?State Voltage (I T = 1.0 A)
(PW ≤ 300 m s, Duty Cycle ≤ 2%) (Note 3)
Breakover Current (f = 60 Hz, V DM = 1000 V(rms), R S = 1.0 k W )
I D1
I D2
V T
I BO
?
?
?
?
?
?
1.53
260
2.0
5.0
5.0
?
m A
V
mA
Both polarities
Holding Current (Both polarities)
V S = 500 Volts; I T (Initiating Current) = " 1.0 A
Critical Rate of Rise of Off?State Voltage
(Linear waveform, V D = Rated V BR , T J = 25 ° C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
(Note 3)
I H
dv/dt
C O
150
2000
?
270
?
65
?
?
?
mA
V/ m s
pF
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
?
160
200
3. Measured under pulse conditions to reduce heating.
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
I D1 , I D2
V D1 , V D2
Off State Leakage Current
Off State Blocking Voltage
V TM
V (BO)
V BR
V BO
Breakdown Voltage
Breakover Voltage
I H
I D1
I D2
I (BO)
I BO
Breakover Current
I H
V TM
Holding Current
On State Voltage
V D1
V D2
V (BR)
+ Voltage
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